IP명 | Bi-Directional Stacked Power Amplifier-Low Noise Amplifier with Unified RF Path for 6G Beamforming Applications | ||
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Category | Analog | Application | 통신 |
실설계면적 | 4㎛ X 4㎛ | 공급 전압 | 1.5V |
IP유형 | Hard IP | 동작속도 | 15GHz |
검증단계 | Silicon | 참여공정 | SS28-2402 |
IP개요 | This paper presents a bi-directional power amplifier and low noise amplifier (PA-LNA) that operates on the upper-mid band for 6G communication, exhibiting high output power and low noise figure. The proposed PA-LNA supports bi-directional operation, unlike the existing PA-LNA that utilizes cross-coupling-capacitor neutralization to reduce insertion loss. In the proposed PA-LNA structure, a differential structure and cross-coupling capacitors are utilized to minimize the gain loss of PA and LNA caused by insertion loss. To support bi-directional operation, the input and output matching network of PA and LNA must be shared in the proposed PA-LNA. To achieve this, the proposed PALNA utilizes switches in the input and output matching networks of the PA-LNA to configure the output matching of the PA and the input matching of the LNA. From a 6G communication perspective, this PA-LNA enables chip size reduction by supporting the bi-directional operation and enables a combined design with other beamforming elements. |
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