| IP개요 |
This chip presents a novel optoelectronic transimpedance amplifier (OTA) for short-range LiDAR sensors implemented in a 180-nm CMOS technology, which consists of a main transimpedance amplifier (m-TIA) with an on-chip P+/N-well/Deep N-well avalanche photodiode (P+/NW/DNW APD) and a replica TIA with another on-chip APD not only to acquire circuit symmetry, but also to obtain concurrent automatic gain control (AGC) function within a narrow pulse-width duration. In particular, 3-bit PMOS switches with series resistors are added in parallel with a passive feedback resistor in the m-TIA for the concurrent AGC operations, where the PMOS switches are turned-on or off in accordance with the DC output voltage amplitudes of the replica TIA. Thereby, post-layout simulations reveal that the OTA extends the dynamic range up to 74.8 dB (i.e., 1 µApp ~ 5.5 mApp) and achieves 67-dBΩ transimpedance gain, 830-MHz bandwidth, 16-pA/√Hz noise current spectral density, −31-dBm optical sensitivity for 10-12 bit-error rate, and 6-mW power dissipation from a single 1.8-V supply. |
