| IP명 | Dv/dt Sensing-based Closed-Loop Multi-Level Active Gate Driver IC of SiC MOSFETs with Fast Short Circuit Detection | ||
|---|---|---|---|
| Category | Analog | Application | WBG Gate Driver IC |
| 실설계면적 | 5㎛ X 2㎛ | 공급 전압 | 5, 20, -5V |
| IP유형 | Hard IP | 동작속도 | 200kHz |
| 검증단계 | Silicon | 참여공정 | HM-2401 |
| IP개요 | Demand of SiC power semiconductor is increasing significantly in the electric vehicle, renewable energy, and power industries. However, due to several issues in driving high-speed switching, full utilization and development are being delayed. Therefore, this paper proposes a novel active gate driver IC with closed-loop to solve issues. By implementing multi-level gate current driving based on dv/dt sensing, the trade-off relationship between the high dv/dt issue and the switching speed can be improved. In addition, the reliability of SiC MOSFET can be enhanced through fast short-circuit detection and protection. Also, it is isolated so that the signal can be transmitted to the high side switch, and robust to noise with a modulation/demodulation circuit. The system is scheduled to be fabricated using the TSMC 180nm BCD process, using Cadence tools for design and verification to develop a high-reliability power conversion system for SiC MOSFETs. |
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